document number: 83613 for technical questions, contact: optocoupleranswe rs@vishay.com www.vishay.com rev. 1.6, 24-may-11 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 optocoupler, phototransistor output, low input current, with base connection il202, IL203 vishay semiconductors description the il202, IL203 is optically coupled pairs employing a gallium arsenide infrared led and a silicon npn phototransistor. signal information, including a dc level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. the il202, IL203 can be used to replace relays and transformers in many digital interface a pplications, as well as analog applications such as crt modulation. features ? guaranteed at i f = 1.0 ma ? high collector emitter voltage, bv ceo = 70 v ? long term stability ? industry standard dip package ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec agency approvals ? ul file no. e52744 system code h, double protection ? cul tested to csa 22.2 bulletin 5a ? din en 60747-5-2 (vde 0884)/din en 60747-5-5 (pending), available with option 1 ? bsi: en 60065:2002, en 60950-1:2006 ?fimko 1 2 3 6 5 4 b c e a c nc i179005-3 dip s md ordering information i l20#-x00#t part number package option tape and reel agency certified/package ctr (%) ul, cul, bsi, fimko 125 to 250 225 to 450 dip-6 - IL203 smd-6, option 9 - IL203-x009t vde, ul, cul, bsi, fimko 125 to 250 225 to 450 dip-6 il202-x001 - > 0.1 mm 7.62 mm dip option 9
www.vishay.com for technical questions, contact: optocoupleranswe rs@vishay.com document number: 83613 2 rev. 1.6, 24-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 il202, IL203 vishay semiconductors optocoupler, phototransistor output, low input current, wi th base connection note ? stresses in excess of the absolute maximum ratings can cause pe rmanent damage to the device. functional operation of the devic e is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to abs olute maximum ratings for e xtended periods of the time ca n adversely affect reliability. note ? minimum and maximum values are testing requirements. typical valu es are characteristics of the device and are the result of en gineering evaluation. typical values are for information only and are not part of the testing requirements. absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit input peak reverse voltage v r 6.0 v forward continuous current i f 60 ma power dissipation p diss 100 mw derate linearly from 25 c 1.33 mw/c output collector emitter breakdown voltage bv ceo 70 v emitter collector br eakdown voltage bv eco 7.0 v collector base breakdown voltage bv cbo 70 v power dissipation p diss 200 mw derate linearly from 25 c 2.6 mw/c coupler isolation test voltage t = 1.0 s v iso 5300 v rms total package dissipation (led and detector) p tot 250 mw derate linearly from 25 c 3.3 mw/c creepage distance ? 7.0 mm clearance distance ? 7.0 mm storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c lead soldering time ?? 260 c 10 s electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit input forward voltage i f = 20 ma v f 1.2 1.5 v i f = 1.0 ma v f 1.0 1.2 v breakdown voltage i r = 10 a v f 6.0 20 v reverse current v r = 6.0 v i r 0.1 10 a output dc forward current gain v ce = 5.0 v, i c = 100 a h fe 100 200 collector emitter breakdown voltage i c = 100 a bv ceo 70 v emitter collector breakdown voltage i e = 100 a bv eco 7.0 10 v collector base breakdown voltage i c = 10 a bv cbo 70 90 v leakage current collector emitter v ce = 10 v, t a = 25 c i ceo 5.0 50 na current transfer ratio (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit current transfer ratio (collector to base) i f = 10 ma, v cb = 10 v ctr cb 15 % collector emitter sa turation voltage i f = 10 ma, i c = 2.0 ma v cesat 0.4 v dc current transfer ratio i f = 10 ma, v ce = 10 v il202 ctr dc 125 200 250 % IL203 ctr dc 225 300 450 % i f = 1.0 ma, v ce = 10 v il202 ctr dc 30 % IL203 ctr dc 50 %
document number: 83613 for technical questions, contact: optocoupleranswe rs@vishay.com www.vishay.com rev. 1.6, 24-may-11 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 il202, IL203 optocoupler, phototransistor output, low input current, wi th base connection vishay semiconductors typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - forward voltage vs. forward current fig. 2 - normalized non-saturated and saturated ctr vs. led current fig. 3 - normalized non-saturated and saturated ctr vs. led current fig. 4 - normalized non-saturated and saturated ctr vs. led current fig. 5 - normalized non-saturated and saturated ctr vs. led current fig. 6 - collector emitter current vs. temperature and led current 100 10 1 0.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 i f - forward current (ma) v f - forward voltage (v) t a = - 55 c t a = 100 c t a = 25 c 100 10 1 0.1 0.0 0.5 1.0 1.5 nctr(sat) nctr i f - led current (ma) nctr - normalized ctr normalized to: v ce = 10 v, i f = 10 ma t a = 25 c ctrce(sat) v ce = 0.4 v 100 10 1 0.1 0.0 0.5 1.0 1.5 nctr(sat) nctr i f - led current (ma) nctr - normalized ctr normalized to: v ce = 10 v, i f = 10 ma, t a = 25 c t a = 50 c ctrce(sat) v ce = 0.4 v 100 10 1 0.1 0.0 0.5 1.0 1.5 i f - led current (ma) nctr(sat) nctr normalized to: v ce = 10 v, i f = 10 ma t a = 25 c ctrce(sat) v ce = 0.4 v t a = 70 c nctr - normalized ctr 0.1 1 10 100 1.5 1.0 0.5 0.0 nctr - normalized ctr nctr(sat) nctr normalized to: v ce = 10 v, i f = 10 ma, t a = 25 c ctrce(sat) v ce = 0.4 v t a = 85 c i f - led current (ma) 60 50 40 30 20 10 0 0 5 10 15 20 25 30 35 50 c 70 c 85 c i ce - collector current (ma) 25 c i f - led current (ma)
www.vishay.com for technical questions, contact: optocoupleranswe rs@vishay.com document number: 83613 4 rev. 1.6, 24-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 il202, IL203 vishay semiconductors optocoupler, phototransistor output, low input current, wi th base connection fig. 7 - collector emitter leakage current vs.temperature fig. 8 - normalized ctr cb vs. led current and temperature fig. 9 - collector base photocurrent vs. led current fig. 10 - normalized photocurrent vs. i f and temperature fig. 11 - normalized saturated h fe vs. base current and temperature fig. 12 - propagation delay vs. collector load resistor 100 80 60 40 20 0 - 20 10 10 10 10 10 10 10 10 -2 -1 0 1 2 3 4 5 t a - ambient temperature (c) i ceo - collector-emitter (na) v ce = 10 v typical 0.1 1 10 100 0.0 0.5 1.0 1.5 50 c 70 c nctr cb - normalized ctrcb normalized to: i f = 10 ma v cb = 9.3 v t a = 25 c 25 c i f - led current (ma) 100 10 1 0.1 0.01 0.1 1 10 100 1000 i cb - collector base photocurrent (a) i cb = 1.0357 * i f ^ 1.3631 t a = 25 c i f - led current (ma) 100 10 1 0.1 0.01 0.1 1 10 normalized photocurrent normalized to: i f = 10 ma, t a = 25 c i f - led current (ma) nib-t a = - 20 c nib,t a = 25 c nib,t a = 50 c nib,t a = 70 c 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 25 c 50 c 70 c i b - base current (a) nh fe(sat) - normalized saturated h fe v ce = 0.4 v i b = 20 a v ce = 10 v t a = 25 c normalized to: r l - collector load resistor (k ) 100 10 1 0.1 1 10 100 1000 1.0 1.5 2.0 2.5 t plh t phl t plh - propagation delay (s) t phl - propagation delay (s) t a = 25 c, i f = 10 ma v cc = 5 v, v th = 1.5 v
document number: 83613 for technical questions, contact: optocoupleranswe rs@vishay.com www.vishay.com rev. 1.6, 24-may-11 5 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 il202, IL203 optocoupler, phototransistor output, low input current, wi th base connection vishay semiconductors fig. 13 - normalized non-saturated and saturated ctr ce vs. led current fig. 14 - normaliz ed non-saturated h fe vs. base current and temperature package dimensions in millimeters package marking (example) notes ? only option 1 is reflected in the package marking ? the vde logo is only marked on option 1 parts ? tape and reel suffix (t) is not part of the package marking 0.1 10 100 0.0 0.1 1.0 1.5 2.0 v ce = 0.4 v nctr ce - normalized ctr ce normalized to: 1 t a = 25 c v ce = 5 v i f = 1 ma i f - led current (ma) v ce = 5 v 1 10 100 1000 0.4 0.6 0.8 1.0 1.2 i b - base current (a) nh fe - normalized h fe i b = 20 a v ce = 10 v t a = 25 c - 20 c 25 c 50 c 70 c normalized to: iso method a 0.25 typ. 2.95 0.5 7.62 typ. 18 3 to 9 7.62 to 8.81 i178004-2 6.4 0.1 8.6 0.1 pin one id 6 5 4 1 2 3 3.555 0.255 0.8 min. 0.85 0.05 2.54 typ. 1 min. 0.5 0.05 4 typ. 1.2 0.1 option 9 8 min. 0.51 1.02 7.62 ref. 9.53 10.03 0.25 typ. 0.102 0.249 15 max. IL203 v yww h 68
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